s1337 series features l high uv sensitivity: qe 75 % ( =200 nm) l low capacitance applications l analytical equipment l optical measurement equipment photodiode si photodiode for uv to ir, precision photometry general ratings / absolute maximum ratings absolute maximum ratings package active area size effective active area reverse voltage v r max. operating temperature topr storage temperature tstg type no. dimensional outline/ window material * (mm) (mm) (mm 2 ) (v) (c) (c) s1337-16bq ? /q s1337-16br ? /r 2.7 15 1.1 5.9 5.9 s1337-33bq ? /q S1337-33BR ? /r 6 7.6 2.4 2.4 5.7 s1337-66bq ? /q s1337-66br ? /r 8.9 10.1 5.8 5.8 33 s1337-1010bq ? /q s1337-1010br ? /r 15 16.5 10 10 100 5 -20 to +60 -20 to +80 electrical and optical characteristics (typ. ta=25 c, unless otherwise noted) photo sensitivity s (a/w) short circuit current isc 100 lx spectral response range peak sensitivity wavelength p p 200 nm he-ne laser gaas led min. typ. dark current i d v r =10 mv max. temp. coefficient of i d t cid rise time tr v r =0 v r l =1 k ? terminal capacitance ct v r =0 v f=10 khz shunt resistance rsh v r =10 mv nep type no. (nm) (nm) min. typ. 633 nm 930 nm (a) (a) (pa) (times/ c) (s) (pf) min. (g ? ) typ. (g ? ) (w/hz 1/2 ) s1337-16bq 190 to 1100 0.5 0.10 0.12 0.33 0.5 4.0 5.3 1.0 10 -14 s1337-16br 320 to 1100 0.62 - - 0.4 0.6 4.4 6.2 50 0.2 65 0.2 0.6 8.4 10 -15 s1337-33bq 190 to 1100 0.5 0.10 0.12 0.33 0.5 4.0 5.0 8.1 10 -15 S1337-33BR 320 to 1100 0.62 - - 0.4 0.6 4.4 6.2 30 0.2 65 0.3 1 6.5 10 -15 s1337-66bq 190 to 1100 0.5 0.10 0.12 0.33 0.5 20 27 1.3 10 -14 s1337-66br 320 to 1100 0.62 - - 0.4 0.6 22 33 100 1 380 0.1 0.4 1.0 10 -14 s1337-1010bq 190 to 1100 0.5 0.10 0.12 0.33 0.5 65 78 1.8 10 -14 s1337-1010br 320 to 1100 960 0.62 - - 0.4 0.6 70 95 200 1.15 3 1100 0.05 0.2 1.5 10 -14 * window material q: quartz glass, r: resin coating 1
si photodiode s1337 series spectral response 0.1 0 190 400 600 800 1000 0.3 0.2 (typ. ta = 25 ?c) 0.4 0.5 0.6 0.7 s1337-br s1337-bq s1337-bq s1337-br photo sensitivity (a/w) wavelength (nm) photo sensitivity temperature characteristic temperature coefficient (%/ ? c) 190 400 600 800 1000 wavelength (nm) 0 (typ. ) +0.5 +1.0 -1.5 +1.5 rise time vs. load resistance 10 2 (typ. ta = 25 ? c, v r = 0 v) 10 ns 10 3 10 4 10 5 100 ns 1 s 10 s 100 s 1 ms s1337-16bq/br, -33bq/br s1337-1010bq/br s1337-66bq/br rise time load resistance ( ? ) dark current vs. reverse voltage dark current reverse voltage (v) 0.01 (typ. ta = 25 ? c) 100 fa 0.1 1 10 1 pa 10 pa 100 pa 1 na 10 na s1337-1010bq/br s1337-66bq/br s1337-33bq/br s1337-16bq/br shunt resistance vs. ambient temperature shunt resistance ambient temperature ( ? c) ? 20 (typ. v r = 10 mv) 10 k ? 0 20 406080 100 k ? 1 m ? 10 m ? 100 m ? 1 g ? 10 g ? 100 g ? 1 t ? s1337-16bq/br, -33bq/br s1337-1010bq/br s1337-66bq/br kspdb0102ea kspdb0053eb kspdb0103ea kspdb0104eb kspdb0105ea 2
si photodiode s1337 series kspda0105ea dimensional outlines (unit: mm) 8.5 0.2 2.7 0.1 0.5 1.5 0.1 6.2 anode terminal mark 0.5 lead 12.2 13.5 0.13 15 0.15 0.95 active area hole (2 ) 0.8 photosensitive surface kspda0106ea 8.5 0.2 2.7 0.1 1.5 0.1 6.2 anode terminal mark resin coating may extend a maximum of 0.1 mm above the upper surface of the package. 13.5 0.13 15 0.15 0.45 active area hole (2 ) 0.8 0.5 lead photosensitive surface kspda0107ea kspda0108ea 7.6 0.1 6.0 0.1 active area 0.1 2.0 0.1 10.5 0.85 0.35 4.5 0.2 anode terminal mark 0.5 lead photosensitive surface 6.6 0.3 5.0 0.3 7.6 0.1 6.0 0.1 active area 2.0 0.1 10.5 0.75 0.35 6.6 0.3 4.5 0.2 5.0 0.3 anode terminal mark 0.5 lead photosensitive surface resin coating may extend a maximum of 0.1 mm above the upper surface of the package. ? s1337-16bq ? s1337-16br ? S1337-33BR ? s1337-33bq 3
si photodiode s1337 series hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, t elephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?2004 hamamatsu photonics k.k. 10.1 0.1 8.9 0.1 active area 0.1 2.0 0.1 10.5 0.85 0.3 9.2 0.3 7.4 0.2 8.0 0.3 anode terminal mark 0.5 lead photosensitive surface 10.1 0.1 8.9 0.1 active area 2.0 0.1 10.5 0.75 0.3 9.2 0.3 7.4 0.2 8.0 0.3 anode terminal mark 0.5 lead photosensitive surface resin coating may extend a maximum of 0.1 mm above the upper surface of the package. cat. no. kspd1032e03 jul. 2004 dn kspda0109ea kspda0110ea kspda0111ea kspda0112ea anode terminal mark 0.5 lead photosensitive surface 16.5 0.2 15.0 0.15 active area 2.15 0.1 10.5 1.0 0.3 15.1 0.3 12.5 0.2 13.7 0.3 0.1 anode terminal mark 0.5 lead photosensitive surface 16.5 0.2 15.0 0.15 active area 2.15 0.1 10.5 0.9 0.3 15.1 0.3 12.5 0.2 13.7 0.3 resin coating may extend a maximum of 0.1 mm above the upper surface of the package.
s1337-66bq
s1337-66br
s1337-1010br
s1337-1010bq 4
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